Work

Controlling the threshold voltage of β-Ga 2 O 3 field-effect transistors via remote fluorine plasma treatment

Year: 2019

Type: article

Source: Journal of Materials Chemistry C

DOI: 10.1039/c9tc02468a

Authors: Janghyuk Kim, Marko J. Tadjer, Michael A. Mastro, Jihyun Kim

Institutions: Korea University, United States Naval Research Laboratory

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Korea Institute of Energy Technology Evaluation and Planning, Office of Naval Research

Awards: G4369048575, G4902162394

OpenAlex ID: W2952585453

FWCI: 1.26

Cites: 35

Cited by: 33

Related to: 10