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Mott-transition-based RRAM
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Year:
2019
Type:
article
Source:
Materials Today
DOI:
10.1016/j.mattod.2019.06.006
Authors:
Yue Wang,
Kyung-Mun Kang,
Minjae Kim,
Hong-Sub Lee,
Rainer Waser,
Dirk Wouters,
Regina Dittmann,
J. Joshua Yang,
Hyung-Ho Park
show all 9
Institutions:
Yonsei University,
Kangwon National University,
RWTH Aachen University,
Forschungszentrum Jülich,
Jülich Aachen Research Alliance,
University of Massachusetts Amherst
show all 6
Language:
English
Topic:
Advanced Memory and Neural Computing
Subfield:
Electrical and Electronic Engineering
Field:
Engineering
Domain:
Physical Sciences
Open Access status:
closed
Funders:
Ministry of Trade, Industry and Energy,
National Research Foundation of Korea,
China Scholarship Council
OpenAlex ID:
W2963312683
FWCI:
3.17
Cites:
151
Cited by:
90
Related to:
10