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Mott-transition-based RRAM

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Year: 2019
Type: article
Source: Materials Today
DOI: 10.1016/j.mattod.2019.06.006
Authors: Yue Wang, Kyung-Mun Kang, Minjae Kim, Hong-Sub Lee, Rainer Waser, Dirk Wouters, Regina Dittmann, J. Joshua Yang, Hyung-Ho Park
Institutions: Yonsei University, Kangwon National University, RWTH Aachen University, Forschungszentrum Jülich, Jülich Aachen Research Alliance, University of Massachusetts Amherst
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea, China Scholarship Council
OpenAlex ID: W2963312683
FWCI: 3.17
Cites: 151
Cited by: 90
Related to: 10
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