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Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode

Year: 2019

Type: article

Abstract: Schottky barrier height (SBH) has been characterized on 4H-SiC Schottky diodes with metal contact of Ti/W by Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements between 80 K and 400 K. Multi-barrier has been recognized and calculated according to different models. No clear difference has been found between single barrier diode and diode with multi-barrier from DLTS tests. Evolution on the I-V characteristics has been observed after high temperature annealing. The effect of annealing at room temperature (RT) and high temperature DLTS scan (stress under high temperature) have also been studied on both static characteristics and DLTS results.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.963.576

Authors: Teng Zhang, Christophe Raynaud, Dominique Planson

Institutions: Université de Lyon, Laboratoire Ampère, Institut National des Sciences Appliquées de Lyon

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Funder: China Scholarship Council

OpenAlex ID: W2963597634

FWCI:

Cites: 5

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Related to: 10