1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias Stress
Year: 2019
Type: article
Abstract: In this work, threshold voltage drift of SiC MOSFET devices have been investigated. The drift during positive gate bias application was found to be moderate for three commercial grade devices, while the results for negative gate bias application differ widely. We demonstrate ON Semiconductor SiC MOSFETs with threshold voltage stability under both positive and negative bias stress due to an improved gate oxide process, and the influence of high field stress on the threshold voltage is additionally discussed. A long term transient high temperature gate bias stress is shown to cause a slight positive shift in the threshold voltage of the ON Semiconductor devices, while the on resistance remains constant.
Source: Materials science forum
Authors: Jimmy Franchi, Martin Domeij, Kwang Won Lee
Institution: ON Semiconductor (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2963620145