High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion
Year: 2019
Type: article
Abstract: Heat management has become more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation is of great importance. Here, we report that high-quality one-atom-thin hexagonal boron nitride (BN) has a thermal conductivity (κ) of 751 W/mK at room temperature, the second largest κ per unit weight among all semiconductors and insulators. The κ of atomically thin BN decreases with increased thickness. Our molecular dynamic simulations accurately reproduce this trend, and the density functional theory (DFT) calculations reveal the main scattering mechanism. The thermal expansion coefficients of monolayer to trilayer BN at 300 to 400 K are also experimentally measured for the first time. Owing to its wide bandgap, high thermal conductivity, outstanding strength, good flexibility, and excellent thermal and chemical stability, atomically thin BN is a strong candidate for heat dissipation applications, especially in the next generation of flexible electronic devices.
Source: Science Advances
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $4,500
Awards: Support for the UKCP consortium, Superior Adsorption Capability of Nanosheets for Surface Enhanced Raman, Infrared and Raman microspectroscopic equipment for biomolecular and nanostructural analysis, Support for the UKCP consortium, G6060785361, New synthesis route for isotope controlled boron nitride crystals and their properties, Tier 2 Hub in Materials and Molecular Modelling, G7615364731, Porous Nanosheets, Support for the UKCP consortium
OpenAlex ID: W2965196536
