High temperature synthesis and characterization of ultrathin tellurium nanostructures
Year: 2019
Type: article
Abstract: Thin tellurium (Te) has been predicted as a potential two dimensional system exhibiting superior thermoelectric and electrical properties. Here, we report the synthesis of high quality ultrathin Te nanostructures and the study of their electrical properties at room temperature. High quality ultrathin Te nanostructures are obtained by high temperature vapor phase deposition on c-plane sapphire substrates. The obtained nanostructures are as thin as 3 nm and exhibit α-Te phase with trigonal crystal structure. Room temperature electrical measurements show significantly higher electrical conductivity compared to prior reports of Te in bulk form or in nanostructure form synthesized by low temperature vapor deposition or wet chemical methods. Additionally, these nanostructures exhibit high field effect hole mobility comparable to black-phosphorous measured previously under similar conditions.
Source: APL Materials
DOI: 10.1063/1.5109899
Institution: Sandia National Laboratories
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,200
OpenAlex ID: W2966169106