Work

Characteristics of oxide TFT using carbon-doped In 2 O 3 thin films by low-temperature ALD

Year: 2019

Type: article

Source: The Japan Society of Applied Physics

Authors: Riku Kobayashi, Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, Atsushi Ogura

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2967355151

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