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Динамика поверхностной проводимости в пленках PbSnTe : In с составом вблизи инверсии зон

Year: 2019

Type: article

Abstract: The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10^5 are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al_2O_3 layer.

Source: Физика и техника полупроводников

DOI: 10.21883/ftp.2019.09.48125.08

Authors: А.Э. Климов, А.Н. Акимов, И.О. Ахундов, В.А. Голяшов, Д.В. Горшков, Д.В. Ищенко, Г.Ю. Сидоров, С.П. Супрун, А.С. Тарасов, В.С. Эпов, О.Е. Терещенко

Institutions: Institute of Semiconductor Physics, Novosibirsk State Technical University, Novosibirsk State University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W2969803108

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