Work

Pressure-induced enhancement of thermoelectric power factor in pristine and hole-doped SnSe crystals

Year: 2019

Type: article

Abstract: , which is very close to the optimal value of SnSe above the structural transition at ∼800 K at ambient pressure. In comparison, the PF of Na-doped SnSe at 290 K is enhanced moderately by ∼30% up to 20 kbar. In contrast, the PF of isostructural black phosphorus with a simple band structure was found to decrease under pressure. The comparison with black phosphorus indicates that the multi-valley valence band structure of SnSe is beneficial for the enhancement of PF by retaining a large Seebeck coefficient under pressure. Our results also provide experimental confirmation on the previous theoretical prediction that high pressure can be used to optimize the thermoelectric efficiency of SnSe.

Source: RSC Advances

DOI: 10.1039/c9ra05134a

Authors: Na Su, B. C. Qin, K. J. Zhu, Z. Y. Liu, P. Shahi, J. P. Sun, B. S. Wang, Y. Sui, Y. G. Shi, L. D. Zhao, J.-G. Cheng

Institutions: Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences, Beihang University, Harbin Institute of Technology, Deen Dayal Upadhyaya Gorakhpur University, Songshan Lake Materials Laboratory

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,042

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, National Key Research and Development Program of China

Awards: G1257749146, G2633007500, 过渡金属磷族化合物中高压调控的磁性量子临界点和非常规超导电性研究, FeSe基超导单晶与薄膜的物理/化学调控及机理研究, G389969255, G5066757888, G6060652889, G6066324883, G6297030467, G6749416020, G7432602225, G8160140056, G881187776, G8921066442

OpenAlex ID: W2970391233

FWCI: 0.509

Cites: 26

Cited by: 12

Related to: 10