Work

Thermoelectrics: Extraordinary n‐Type Mg3SbBi Thermoelectrics Enabled by Yttrium Doping (Adv. Mater. 36/2019)

Year: 2019

Type: article

Abstract: In article number 1903387, Yanzhong Pei and co-workers show yttrium as an efficient dopant for increasing the carrier concentration in Mg3SbBi alloy. The utilization of a tantalum sealing technique enables the successful synthesis of this material with coarse grains, leading to an inherently high carrier mobility. These features result in an extraordinary n-type thermoelectric material with an ecofriendly composition, which is like a beautiful lotus growing up from silt. This work suggests the bright future of these thermoelectric materials for sustainable applications.

Source: Advanced Materials

DOI: 10.1002/adma.201970253

Authors: Xuemin Shi, Tingting Zhao, Xinyue Zhang, Cheng Sun, Zhiwei Chen, Siqi Lin, Wen Li, Hui Gu, Yanzhong Pei

Institutions: Tongji University, Shanghai University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

OpenAlex ID: W2971601143

FWCI: 0.17

Cites:

Cited by: 8

Related to: 10