Work

Effect of AlGaN/GaN growth using triethylgallium on 2DEG-side interfacial charge

Year: 2019

Type: article

Source: The Japan Society of Applied Physics

Authors: Hiromasa Okita, Takuya Hoshii, Taihei Matsuhashi, Indraneel Sanyal, Yu‐Chih Chen, Ying-Hao Ju, Akira Nakajima, Shin‐ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Jen‐Inn Chyi, Kazuo Tsutsui

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2971765663

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