Work

Effect of GaN/AlGaN growth using triethylgallium on 2DHG-side interfacial charge

Year: 2019

Type: article

Source: The Japan Society of Applied Physics

Authors: Taihei Matsuhashi, Takuya Hoshii, Hiromasa Okita, Indraneel Sanyal, Yu‐Chih Chen, Ying-Hao Ju, Akira Nakajima, Kakushima Kuniyuki, Hitoshi Wakabayashi, Jen‐Inn Chyi, Tsutsui Kazuo

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2971815128

FWCI:

Cites:

Cited by:

Related to: 20