Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu 3 In 5 Te 9 -based chalcogenides
Year: 2019
Type: article
Abstract: Co-regulation of both the copper vacancy concentration ( V c ) and point defect GaIn realizing the high carrier concentration and low lattice thermal conductivity in Cu 3 In 5 Te 9 -based chalcogenides simultaneously.
Source: RSC Advances
DOI: 10.1039/c9ra06565b
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,042
Awards: G2713424231, G2755264318, G8600042106
OpenAlex ID: W2978039349
