Work

Amorphous IGZO TFT with High Mobility of ∼70 cm 2 /(V s) via Vertical Dimension Control Using PEALD

Year: 2019

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.9b14310

Authors: Jiazhen Sheng, TaeHyun Hong, Hyun-Mo Lee, KyoungRok Kim, Masato Sasase, Junghwan Kim, Hideo Hosono, Jin-Seong Park

Institutions: Hanyang University, Tokyo Institute of Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, Ministry of Trade, Industry and Energy, Korea Display Research Corporation, Japan Society for the Promotion of Science, Samsung Display

Awards: Exploration of New Non-Toxic Metal Halides for Optoelectronic Applications, G4483165119, G6001806283

OpenAlex ID: W2978176079

FWCI: 10.07

Cites: 58

Cited by: 333

Related to: 10