Work

Transition levels of intrinsic defects in type-II InAs/InAs0.5Sb0.5 strained-layer superlattices

Year: 2019

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.5110165

Authors: Maosheng Miao, Nicholas Kioussis, Christoph H. Grein

Institutions: California State University, Northridge, University of Illinois Chicago

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Army Research Office

Award: G5298108159

OpenAlex ID: W2979396806

FWCI: 0.22

Cites: 35

Cited by: 4

Related to: 10