Work

Control of electron tunnelling by fine band engineering of semiconductor potential barriers

Year: 2019

Type: article

Source: Nanoscale

DOI: 10.1039/c9nr03268a

Authors: Yunhao Zhao, Chenyuan Cai, Yi Zhang, Xuebing Zhao, Yingqiang Xu, Chongyun Liang, Zhichuan Niu, Yi Shi, Renchao Che

Institutions: Fudan University, Collaborative Innovation Center of Chemistry for Energy Materials, Chinese Academy of Sciences, Institute of Semiconductors, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Ministry of Science and Technology of the People's Republic of China, Science and Technology Commission of Shanghai Municipality

Awards: G1662544281, G2548197348, G2792393688, G4164681015, 轻质中空“双面神”结构核壳微球的制备及其耐高温吸波机理的原位透射电子显微学研究, G7765188774

OpenAlex ID: W2979911211

FWCI: 0.271

Cites: 54

Cited by: 3

Related to: 10