Work

Effect of oxygen partial pressure on crystal quality and electrical properties of RF sputtered PZT thin films under the fixed Ar flow and sputtering pressure

Year: 2019

Type: article

Source: Vacuum

DOI: 10.1016/j.vacuum.2019.109041

Authors: Xing Wang, Biao Li, Liping Qi, Fengwei Wang, Fei Ding, Renkai Zhang, Helin Zou

Institution: Dalian University of Technology

Language: English

Topic: Ferroelectric and Piezoelectric Materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2277439334

OpenAlex ID: W2982593443

FWCI: 0.608

Cites: 23

Cited by: 13

Related to: 10