Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors
Year: 2019
Type: article
Source: physica status solidi (a)
Authors: Jin-Feng Zhang, Jin-Feng Zhang, Wan-Jiao Chen, Ze-Yang Ren, Kai Su, Peng-Zhi Yang, Zhuang-Zhuang Hu, Jin-Cheng Zhang, Jin-Cheng Zhang, Yue Hao
Institution: Xidian University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G4237519315, G8150279066
OpenAlex ID: W2983397899
