Work

Displacement damage effects and anneal characteristic on InP/InGaAs DHBTs

Year: 2018

Type: conference-paper

Source: International Conference on Radiation Effects of Electronic Devices (ICREED)

DOI: 10.1109/icreed.2018.8905072

Authors: Xingyao Zhang, Yudong Li, Qi Guo, Bin Liao, Shi Yang, Zhongyue Yang, Chengfa He

Institutions: Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, China Electronics Technology Group Corporation

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2990394201

FWCI: 0.399

Cites: 19

Cited by: 3

Related to: 10