Work

Prediction of dislocation density in AlN or GaN films deposited on (0001) sapphire

Year: 2019

Type: article

Source: Journal of Materials Science

DOI: 10.1007/s10853-019-04240-x

Authors: S. Lay, F. Mercier, R. Boichot, G. Giusti, M. Pons, E. Blanquet

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Science et Ingénierie des Matériaux et Procédés, Université Grenoble Alpes

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2990564499

FWCI: 0.292

Cites: 29

Cited by: 3

Related to: 10