Work

Regulation of both the crystal structure and carrier concentration leading to the improved thermoelectric performance of Cu 3 SbSe 4 -based chalcogenides

Year: 2019

Type: article

Abstract: In this work, we regulate the crystal structure of Cu 3 SbSe 4 through alloying Cu 3 SnS 4 , and decouple the contribution of the phonon scattering on the distorted crystal structure. This contribution, which was not considered previously in Cu 3 SbSe 4 -based systems, leads to a 44% (room temperature) and 22% (607 K) drop in the lattice part ( κ L ). Therefore, it is of great importance to improve the thermoelectric performance. At the same time, we regulate the carrier concentration ( n H ) through co-alloying Cu 3 SnS 4 and ZnSe and attain the optimal n H value (~10 20 cm −3 ) at room temperature. As a result, the electrical property improves with the highest power factor of 12.63 µ W cm −1 K −2 for the solid solution (Cu 3 SbSe 4 ) 0.1 (Cu 3 SnS 4 ) 0.9 (ZnSe) 0.02 . Consequently, the thermoelectric performance improves remarkably with the peak figure of merit value of 0.65 at 700 K while that of the pristine Cu 3 SbSe 4 is only 0.26 at 588 K.

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ab590e

Authors: Lei Min, Pengzhan Ying, Xie Li, Jiaolin Cui

Institutions: Ningbo University of Technology, China University of Mining and Technology

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funder: National Natural Science Foundation of China

Awards: G2755264318, G8600042106