Work

Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD

Year: 2019

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/s11664-019-07875-3

Authors: Shubhra S. Pasayat, Cory Lund, Yusuke Tsukada, Massimo Catalano, Luhua Wang, Moon J. Kim, Shuji Nakamura, Stacia Keller, Umesh K. Mishra

Institutions: University of California, Santa Barbara, National Research Council, The University of Texas at Dallas

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Defense Advanced Research Projects Agency, Office of Naval Research

OpenAlex ID: W2996580485

FWCI: 0.291

Cites: 24

Cited by: 2

Related to: 10