Work

High temperature (300 °C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs

Year: 2020

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.5126359

Authors: Zeyang Ren, Dandan Lv, Jiamin Xu, Jinfeng Zhang, Jincheng Zhang, Kai Su, Chunfu Zhang, Yue Hao

Institution: Xidian University

Language: English

Topic: Diamond and Carbon-based Materials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Postdoctoral Program for Innovative Talents, National Science and Technology Infrastructure Program

Awards: G2577657488, G4237519315, G8150279066

OpenAlex ID: W2997609917

FWCI: 3.263

Cites: 32

Cited by: 50

Related to: 10