Year: 2019
Type: article
Abstract: The conductance through a quantum dot (QD) between a source and a drain electrode is usually controlled electrostatically by a nearby gate electrode. A periodic modulation of the conductance versus gate voltage is observed, swapping between Coulomb blockade and single-electron tunneling. By controlling the Fermi level of a third (‘base’) lead attached to the QD, we were able to switch a single-electron current from source to drain, exceeding the single-electron current to or from the base lead. A simple model is presented revealing the role of ground- and excited states within the QD for this dynamic operation of a single-electron transistor.
Authors: Armin C Welker, Jürgen Weis
Institution: Max Planck Institute for Solid State Research
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,700
OpenAlex ID: W2997905808