Work

Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures

Year: 2019

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.9b06140

Authors: Anyuan Gao, Zhiyi Zhang, Lingfei Li, Binjie Zheng, Chenyu Wang, Yaojia Wang, Tianjun Cao, Yu Wang, Shi-Jun Liang, Feng Miao, Yi Shi, Xiaomu Wang

Institutions: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Fundamental Research Funds for the Central Universities

OpenAlex ID: W2998728578

FWCI: 1.91

Cites: 49

Cited by: 47

Related to: 10