Work

Dual-field plated β-Ga 2 O 3 nano-FETs with an off-state breakdown voltage exceeding 400 V

Year: 2020

Type: article

Source: Journal of Materials Chemistry C

DOI: 10.1039/c9tc05161a

Authors: Jinho Bae, Hyoung Woo Kim, In Ho Kang, Jihyun Kim

Institutions: Korea University, Korea Electrotechnology Research Institute

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Korea Electrotechnology Research Institute, National Research Foundation of Korea, Korea Institute of Energy Technology Evaluation and Planning

Awards: G4902162394, G5160235623, G6155946018

OpenAlex ID: W2999314572

FWCI: 2.3

Cites: 31

Cited by: 22

Related to: 10