Year: 2019
Type: article
Abstract: Vertical geometry Ga 2 O 3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1–3 × 10 13 cm −2 or 10 MeV protons to fluences of 1–3 × 10 14 cm −2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm −1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga 2 O 3 , suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.
DOI: 10.1149/2.0231912jss
Institutions: University of Florida, Korea University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2999377230