Work

Thermoelectric properties of phase separated Ti substituted Zr0.75Hf0.25NiSn0.985Sb0.015 half-Heuslers

Year: 2020

Type: article

Abstract: Sb is a very effective dopant for ZrNiSn based half-Heusler alloys. The effect of Ti substitution on Zr 0.75 Hf 0.25 NiSn 0.985 Sb 0.015 half-Heusler (HH) semiconductor alloys has been investigated to explore the structural modifications and composition variation. Ti x Hf 0.25 Zr 0.75-x NiSn 0.985 Sb 0.015 (x = 0, 0.15, 0.30, 0.45) alloys were synthesized by induction melting. A set of samples was also annealed for comparative studies. The samples were then sintered using plasma activated sintering (PAS) technique. XRD results confirmed the existence of ZrNiSn type HH compounds . Backscattered electron (BSE) images showed phase separations in the samples. Ti substitution improved the carrier concentration and electrical conductivity of the alloys. Moreover, thermal conductivity was also significantly reduced due to the enhanced phonon scattering. Consequently, a ZT value of 1.11 at 873 K was obtained for 30% Ti substituted (annealed) sample.

Source: Progress in Natural Science Materials International

DOI: 10.1016/j.pnsc.2019.12.007

Authors: Rizwan Akram, Yonggao Yan, Mozaffar Hussain, Xiaoyu She, Xinfeng Tang

Institutions: Wuhan University of Technology, State Key Laboratory of Advanced Technology For Materials Synthesis and Processing, Air University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,790

Funders: National Natural Science Foundation of China, Higher Education Discipline Innovation Project, National Key Basic Research Program For Youth, National Key Research and Development Program of China