Formation and thermoelectric properties of the n- and p-type silicon nanostructures with embedded GaSb nanocrystals
Year: 2020
Type: article
Abstract: A silicon heterostructure with four layers of embedded gallium antimonide nanocrystals was formed on a Si(111) substrate by co-deposition of Ga and Sb using solid-phase epitaxy. Si(111)2 × 1-Sb surface reconstruction formed prior to the GaSb nanocrystal growth, which kept the nanocrystals from decomposition during the silicon epitaxial layer formation. P- and n-type structures were obtained using silicon of different conductivity types. In the 200–550 K temperature range they showed increases in both electrical conductivity and Seebeck coefficient compared with the bulk samples, which was explained by the peculiarities of the heterointerface band alignment and density of states at the Fermi level. The results open the way for creating multilayer structures with enhanced thermoelectric performance.
Institutions: Far Eastern Federal University, Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics, National University of Science and Technology, Research Center for Applied Science, Academia Sinica, Academia Sinica
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Awards: G1276468908, G6236019056, G6910445477
OpenAlex ID: W3003509454