Work

Structural failure of layered thermoelectric In4Se3-δ semiconductors is dominated by shear slippage

Year: 2020

Type: article

Source: Acta Materialia

DOI: 10.1016/j.actamat.2020.01.045

Authors: Min Huang, Guodong Li, Qi An, Pengcheng Zhai, William A. Goddard

Institutions: Wuhan University of Technology, State Key Laboratory of Advanced Technology For Materials Synthesis and Processing, University of Nevada, Reno, California Institute of Technology

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, National Natural Science Foundation of China, Natural Science Foundation of Hubei Province, Aerostatic Science Foundation, Fundamental Research Funds for the Central Universities, Division of Chemical, Bioengineering, Environmental, and Transport Systems, Sandia National Laboratories

Awards: G1918352036, 高压诱导热电材料能带简并机制及对电、热输运性能的影响, Development of Hybrid Solid Materials for Stable Molecular Oxygen Anodes, G3365836029, 电负性客体填充的新型方钴矿材料合成和输运机制研究, G4012782257, G6163635944, G78455326, G8376039301

OpenAlex ID: W3004043331

FWCI: 0.093

Cites: 47

Cited by: 6

Related to: 10