Work

Bond-photon-phonon thermal relaxation in the M(X, X 2 ) (M = Mo, Re, Ta, Ge, Sn; X = S, Se, and Te)

Year: 2020

Type: article

Abstract: bond relaxation methods. It is revealed that the thermal decay of both bandgap energy and phonon frequency arose from the thermal integration of the specific heat of Debye approximation. The results indicate that (i) the bandgap energy relaxation is due to the thermal excitation-induced weakening of the bond energy, and the phonon frequency was just a function of bond length and bond energy; (ii) the Debye temperature determines the nonlinear range at low temperatures; (iii) the reciprocal of the atomic cohesive energy governs the linear behavior at high temperatures. Thus, the outcomes of this study include fundamental information about photon, phonon, and the thermal properties of layered semiconductors, which are crucial to develop the new generations of thermal and electronic applications of devices based on layered semiconductors.

Source: RSC Advances

DOI: 10.1039/c9ra10288d

Authors: Yonghui Liu, Hongwei Xiao, Li Luo, Huayun Xiao

Institution: East China University of Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,042

Funder: National Natural Science Foundation of China