Work

Engineering of defects in resistive random access memory devices

Year: 2020

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.5136264

Authors: Writam Banerjee, Qi Liu, Hyunsang Hwang

Institutions: Pohang University of Science and Technology, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Award: G1456874378

OpenAlex ID: W3004989590

FWCI: 5.497

Cites: 155

Cited by: 111

Related to: 10