Work

Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator

Year: 2019

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm19573.2019.8993463

Authors: Seyoung Kim, Teodor Todorov, Murat Onen, Tayfun Gokmen, Douglas Bishop, Paul Solomon, Ko-Tao Lee, Matt Copel, Damon B. Farmer, John A. Ott, Takashi Ando, Hiroyuki Miyazoe, Vijay Narayanan, John Rozen

Institution: IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3006607400

FWCI: 17.09

Cites: 4

Cited by: 100

Related to: 10