Получение тонких пленок теллурида висмута на полиимидных подложках методом импульсного лазерного осаждения
Year: 2020
Type: article
Abstract: The peculiarities of obtaining p -Bi_0.5Sb_1.5Te_3 and n -Bi_2Te_2.7Se_0.3 thin thermoelectric films with a thickness of about 300 nm grown on a polyimide substrate by the pulsed-laser-deposition method are reported. The influence of the growth temperature, pressure and target-to-substrate distance on the film’s thermoelectric properties is investigated. Thermoelectric p - and n -type films exhibit a high Seebeck coefficient of 220 and –200 μV/K and low electrical power factors of 9.7 and 5.0 μW/(cm K^2) respectively due to the relatively high electrical resistances of the films.
Source: Физика и техника полупроводников
Authors: А.Е. Шупенев, И.С. Коршунов, А.Г. Григорьянц
Institution: Bauman Moscow State Technical University
Language: Russian
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W3007877482