Year: 2020
Type: article
Abstract: GeTe-based alloys have been considered promising p-type thermoelectric materials at medium temperatures (300−800 K). Indium (In), an effective dopant that introduces resonant states, and selenium (Se), which reduces lattice thermal conductivity, were combined. The process resulted in the enhancement of the power factor because of the distortion of the density of state and descent of thermal conductivity after the appearance of point defects and the scattering of boundaries. Ge0.99In0.01Te0.95Te0.05 had a high zT of ∼1.38, which is higher than the zT values of In- or Se-doped systems. The high zT demonstrated that p-type In/Se co-doped GeTe compounds exerted synergistic effects on electrical and thermal transport.
Authors: Luo Yue, Wenlin Cui, Shuqi Zheng, Yue Wu, Ximeng Dong, Guiwu Lu
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,000
OpenAlex ID: W3008748295
