Synthesis of Mg 2 Si thin film by thermal treatment under inert gas atmosphere and evaluation of film quality
Year: 2020
Type: article
Abstract: We report on the synthesis of Mg 2 Si thin films from a Mg-Si solution by thermal treatment of Mg on a Si substrate under an Ar gas atmosphere. The Mg was prepared by two methods. One is to deposit Mg films by thermal evaporation, and another is to simply place Mg ribbons on Si. After thermal treatment, a two-layer structure consisting of oxide and ∼1 μ m-thick Mg 2 Si films with {100} preferential orientation was observed for the sample prepared by thermal evaporation. On the other hand, ∼10 μ m-thick single layer Mg 2 Si with more random orientations and cracks was formed for the Mg ribbon contact samples. Possible mechanisms for different structures, crystal orientations, and crack formation are discussed.
Institution: Nagoya University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W3009590809