Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC
Year: 2020
Type: article
Source: Crystal Growth & Design
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: H2020 Industrial Leadership
Award: G4362228929
OpenAlex ID: W3011228094
