Year: 2020
Type: article
Abstract: The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.
Source: npj Quantum Information
Authors: Daniil M. Lukin, Alexander D. White, Rahul Trivedi, Melissa A. Guidry, Naoya Morioka, Charles Babin, Öney O. Soykal, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Praful K. Vasireddy, Mamdouh H. Nasr, Shuo Sun, Jean-Philippe W. MacLean, Constantin Dory, Emilio A. Nanni, Jörg Wrachtrup, Florian Kaiser, Jelena Vučković
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,490
Funders: National Science Foundation, U.S. Department of Energy, Alexander von Humboldt-Stiftung, Microsoft Research, European Commission, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Knut och Alice Wallenbergs Stiftelse, Max-Planck-Gesellschaft, Vetenskapsrådet, Energimyndigheten, Office of Science, Horizon 2020 Framework Programme, National Defense Science and Engineering Graduate, Japan Society for the Promotion of Science, Division of Electrical, Communications and Cyber Systems
Awards: G1333989588, G1502681674, Quantum Emitters for Telecommunication in the O-Band, Quantum state measurements of single photon sources in silicon carbide devices, G2076373681, Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic properties, FRONTIERS IN QUANTUM METROLOGY AND TRANSDUCTION, Silicon carbide for quantum spintronics, G2371548206, G2521557779, G303061748, G3105035837, G3421355271, NNCI: Stanford University - SNSF, SNF, MAF, EMF, G4123512917, G4399378207, G4633165975, G4937468798, G495187929, FRONTIERS IN QUANTUM METROLOGY AND TRANSDUCTION, G7038336292, G7307806049, G7391003484, G7820716407, G8382000481, RAISE-TAQS: Inverting the design paradigm: Tunable qubits in hybrid photonic materials as a scalable platform for quantum photonic devices, G8853325899, Quantum-enhanced Sensing via Quantum Control
OpenAlex ID: W3013063181