Work

Thickness dependent transition from the 1T′ to Weyl semimetal phase in ultrathin MoTe 2 : electrical transport, noise and Raman studies

Year: 2020

Type: article

Abstract: (∼5 to 16 nm thick) field-effect transistor (FETs) devices as a function of temperature. The electrical resistivities for a thickness of 16 nm and 11 nm show maxima at temperatures of 208 K and 178 K, respectively, making a transition from the semiconducting to semi-metallic phase, hitherto not observed in bulk samples. Raman frequencies and linewidths for an 11 nm thick crystal show a change around 178 K, attributed to the additional contribution to the phonon self-energy due to the enhanced electron-phonon interaction in the WSM phase. Furthermore, the resistivity at low temperature shows an upturn below 20 K along with the maximum in the power spectral density of the low frequency 1/f noise. The latter rules out the metal-insulator transition (MIT) being responsible for the upturn of resistivity below 20 K. The low temperature resistivity follows ρ∝ 1/T, changing to ρ∝T with increasing temperature supports electron-electron interaction physics at electron-hole symmetric Weyl nodes below 20 K. These observations will pave the way to unravel the properties of the WSM state in layered ultra-thin van der Waals materials.

Source: Nanoscale

DOI: 10.1039/c9nr10383j

Authors: Manabendra Kuiri, Subhadip Das, D. V. S. Muthu, Anindya Das, A. K. Sood

Institution: Indian Institute of Science Bangalore

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: Indian Institute of Science, Department of Science and Technology, Ministry of Science and Technology, India

Award: G560251122