Work

3.3 kV/450 A Full-SiC nHPD2 (next High Power Density Dual) with Smooth Switching

Year: 2017

Type: article

Authors: Takashi Ishigaki, Seiichi Hayakawa, Tatsunori Murata, Toshio Nozoe, Hidekatsu Onose, Hiroshi Miki, Masakazu Sagawa, Tetsuo Oda, Kan Yasui, Daisuke Kawase, Yuji Takayanagi, Renichi Yamada, Toru Masuda, Naoki Tega

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W3014245974

FWCI: 1.673

Cites:

Cited by: 20

Related to: 10