A plausible method of preparing the ideal p-n junction interface of a thermoelectric material by surface doping
Year: 2020
Type: article
Source: Applied Surface Science
Institutions: Pusan National University, Korea Institute of Science and Technology, Lawrence Berkeley National Laboratory, Advanced Light Source, Korea Atomic Energy Research Institute, Max-Planck-POSTECH Center for Complex Phase Material, Pohang University of Science and Technology, Pohang Accelerator Laboratory, University of Ulsan
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W3017348916
