(Invited) Nano-Precision Deep Reactive Ion Etching of Monocrystalline 4H-SiCOI for Bulk Acoustic Wave Resonators with Ultra-Low Dissipation
Year: 2020
Type: conference-paper
Abstract: Integrated mechanical resonators with high quality factors (Q) made in high acoustic velocity materials are essential for a wide range of applications, including chemical sensors, timing resonators, and high-performance inertial sensors for navigation in GPS-occluded environments. While silicon is the most popular substrate for implementation of microelectromechanical systems (MEMS) resonators, SiC exhibits an exceptionally small intrinsic phononic dissipation due to high Akhiezer limits. This paper reports the latest results on nano-precision deep reactive ion etching (DRIE) of monocrystalline 4H SiC-on-Insulator (SiCOI) substrates to explore dissipation limits of bulk acoustic wave (BAW) SiC resonators. We report for the first time on capacitive Lamé mode resonators with ƒ·Q products beyond 1×1014 Hz. The contribution of surface roughness to dissipation and practical considerations to etch mirror-polished trenches in SiCOI substrates are discussed, paving the way towards micromechanical SiC resonators with Qs beyond 100 M.
Source: ECS Transactions
Authors: Farrokh Ayazi, Benoit Hamelin, Jeremy Yang
Institution: Georgia Institute of Technology
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W3021799092