Work

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

Year: 2020

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2020.2993982

Authors: Ruizhe Zhang, Joseph P. Kozak, Ming Xiao, Jingcun Liu, Yuhao Zhang

Institution: Virginia Tech

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Virginia Polytechnic Institute and State University

Awards: WIDE BANDGAP GENERATION (WBGEN): DEVELOPING THE FUTURE WIDE BANDGAP POWER ELECTRONICS ENGINEERING WORKFORCE, POWERAMERICA: THE NEXT GENERATION POWER ELECTRONICS MANUFACTURING INNOVATION INSTITUTE

OpenAlex ID: W3024406559

FWCI: 13.26

Cites: 22

Cited by: 157

Related to: 10