Work

HVPE and MOVPE GaN growth on slightly misoriented sapphire substrates[Hydride Vapor Phase Epitaxy, Metal Organic Vapor Phase Epitaxy]

Year: 2000

Type: article

Source: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Authors: O. Parillaud, V. Wagner, H.‐J. Buehlmann, F. Lelarge, M. Ilegems

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W303087912

FWCI:

Cites:

Cited by: 1

Related to: 20