Work

Drastic power factor improvement by Te doping of rare earth-free CoSb 3 -skutterudite thin films

Year: 2020

Type: article

Abstract: near room temperature. It is related to the Te doping effect which leads to an increase of the Seebeck coefficient and the electrical conductivity simultaneously. However, despite this large improvement, the properties remained far from the bulk material and further developments are necessary to improve the carrier mobility reduced by the thin film formatting.

Source: RSC Advances

DOI: 10.1039/d0ra02699a

Authors: Cédric Bourgès, Naoki Sato, Takahiro Baba, Tetsuya Baba, Isao Ohkubo, Naohito Tsujii, Takao Mori

Institutions: National Institute for Materials Science, Research Center for Materials Nanoarchitectonics

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,042

Funders: Japan Society for the Promotion of Science, Japan Science and Technology Agency, National Institute for Materials Science, Core Research for Evolutional Science and Technology, JST-Mirai Program

Awards: G1745943860, G3509110399, 磁性を活用した革新的熱電材料・デバイスの開発, G4316055986, G4725250919, G5491032136, G6345002399, G6459021381, G6718509927, G6782912343, G993602793

OpenAlex ID: W3033365678

FWCI: 1.214

Cites: 61

Cited by: 19

Related to: 10