Work

Topologically protected spin diffusion and spin generator using chalcogenide superlattices

Year: 2020

Type: article

Abstract: Spintronics is expected to be the basis for future ultra-low-energy nanoelectronic devices. To operate such devices at room temperature, amplifiers, batteries, capacitors, as well as spin current sources are required. Here we report a chalcogenide superlattice composed of GeTe and Sb2Te3 layers that have a topologically protected spin diffusion length exceeding 100 μm at room temperature. A spin generator is demonstrated by combining magnetic injectors (TbFeCo) with this superlattice. The spin current was found to increase exponentially with the number of superlattice periods. We used this effect to demonstrate a 15-fold increase in the spin current. In addition, spin rectification is possible by growing the superlattice layers with atomic-level thickness accuracy. The reported chalcogenide superlattice spin generators and rectifiers open new opportunities to design low-energy spintronic integrated circuits and quantum computers.

Source: npj 2D Materials and Applications

DOI: 10.1038/s41699-020-0157-8

Authors: Junji Tominaga, Noriyuki Miyata, Satoshi Sumi, Hiroyuki Awano, Shuichi Murakami

Institutions: National Institute of Advanced Industrial Science and Technology, Toyota Technological Institute, Tokyo Institute of Technology

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,790

Funders: Japan Science and Technology Agency, Core Research for Evolutional Science and Technology