Ultra-Wide Bandgap β -Ga 2 O 3 Heterojunction Field-Effect Transistor Using p-Type 4H-SiC Gate for Efficient Thermal Management
Year: 2020
Type: article
Abstract: The low thermal conductivity and the absence of effective acceptors limit the potential utility of β -Ga 2 O 3 electronics. Herein, to generate an n-channel β -Ga 2 O 3 heterojunction field-effect transistor (FET) with efficient thermal management, n-type β -Ga 2 O 3 as a channel layer was integrated with p-type 4H-SiC as both a gate and a thermal drain via van der Waals interaction. The n-p β -Ga 2 O 3 /4H-SiC heterojunction displayed typical rectifying behavior with an ideality factor of 1.4 and a rectification ratio of ∼10 7 . The fabricated β -Ga 2 O 3 heterojunction FET operated in depletion mode with current saturation above the pinch-off voltage, which is consistent with the results of numerical device simulation. Excellent output and transfer characteristics were observed, including no hysteresis, low subthreshold swing (∼114 mV dec −1 ), and a high output current on/off ratio (∼10 8 ). The numerical heat simulation indicated that the integration of β -Ga 2 O 3 with 4H-SiC could greatly lower the peak operating temperature (by >70 °C), thereby improving the long-term reliability and stability of the β -Ga 2 O 3 -based electronic devices.
Institutions: Korea University, Korea Electrotechnology Research Institute
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W3041614140