Work

Behavior of Highly Te doped InGaAs

Year: 2017

Type: article

Author: E. L. Kennon

Language: Italian

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3044085258

FWCI:

Cites: 177

Cited by:

Related to: 10