Work

4H-SiC MOSFET Source and Body Laser Annealing Process

Year: 2020

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.1004.705

Authors: Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via

Institutions: University of Messina, Institute for Microelectronics and Microsystems, University of Catania

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W3045900278

FWCI: 0.169

Cites: 16

Cited by: 3

Related to: 10