Work

Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application

Year: 2020

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2020.148130

Authors: Yong Ha Choi, Kwang Hyeon Baik, Suhyun Kim, Jihyun Kim

Institutions: Korea University, Hongik University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Defense Acquisition Program Administration, Korea Institute of Energy Technology Evaluation and Planning

Award: G7878941583

OpenAlex ID: W3091884652

FWCI: 2.793

Cites: 42

Cited by: 33

Related to: 10